Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.     

Evaluation of compatibility in polymer blend systems by simultaneous DSC-FTIR measurement

The concept of crystallization dynamics method evaluating the miscibility of binary blend system including crystalline component was proposed. Three characteristic rates, nucleation, crystal growth rates (N*, G*) and growth rate of conformation (G _c*) were used to evaluate the miscibility of PVDF/at-PMMA and PVDF/iso-PMMA by the simultaneous DSC-FTIR. N*, G* and G _c* depended remarkably on both temperature and blend fraction (ϕ_PMMA) for PVDF/at-PMMA system, which indicated the miscible system. PVDF/iso-PMMA showed small ϕ_PMMA dependency of N*, G* and G _c*, was estimated the immiscible system. The ΔT/T _m⁰ values, corresponding to Gibbs energy required to attend the constant G* and G _c*, evaluated from G* and G _c* showed the good linear relationships with different slope. The experimental results suggested that the concentration fluctuation existed in PVDF/iso-PMMA system.     

Preparation and characterization of mesoporous silica thin films from polyethoxysiloxanes

Tetraethoxysilane (TEOS) and polyethoxysiloxanes (PEOSs; prepared by the acid‐catalyzed hydrolytic polycondensation of TEOS) were subjected to the sol–gel process in the presence of cetyltrimethylammonium bromide (CTAB), respectively. The PEOSs with M_w 700–26,000, as prepared by sol–gel coating of TEOS and PEOS under various conditions, were used. Uniform and crack‐free thin films of thickness 276–613 nm were prepared by spin‐coating of a PEOS solution containing CTAB. When the coating films were sintered at 400 °C, the combustion of ethoxy groups and CTAB took place to provide porous silica thin films. The structure of the thin films was found to be dependent on the molecular weight of PEOS and the molar ratio of CTAB/Si: lamellar or hexagonal phase was observed for M_w less than 15,000 and for CTAB/Si molar ratios greater than 0.10. Honeycomb structures were observed for M_w less than 5000 and for CTAB/Si molar ratios of 0.15. The honeycomb structure was also observed by atomic force microscopy and transmission electron microscope. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2542–2550, 2006     

QCD perturbation theory in the temporal gauge

In this paper we present a non-trivial check of the consistency of the quantization of a gauge theory with fermions (QCD) in the temporal gauge. We use the approach based on the finite time Feynman propagation kernel, in which the Gauss law is imposed as a constraint on the states by means of a functional integration over all the time independent gauge transformations acting on the boundary values of the fields. We spell out in detail the “Feynman rules” when fermions are present and we compute, as an example, the gauge invariant correlation function $$\begin{gathered} G(t) = \left\langle {\bar \psi (0,t)(\gamma _5 \gamma _0 )\frac{{1 - \gamma _0 }}{2}P} \right. \hfill \\ \left. { \cdot \exp \left( {ig\int\limits_0^t {A_0 (0,t')dt'} } \right)(\gamma _5 \gamma _0 )^ + (0,0)} \right\rangle \hfill \\ \end{gathered} $$ up to orderg ², obtaining the expected result.